Vishay Intertechnology, Inc. announced that at electronica China 2024, the company will be showcasing its broad portfolio of passive and semiconductor solutions that meet the latest automotive and e-mobility needs to deliver accurate and reliable performance in harsh operating conditions. In hall E3, booth 3600, Vishay will be showcasing its differentiated products and solutions, and the advantages of utilizing them in designs. Among the highlights taking center stage at Vishay's booth will be: Newly released 1200 V MaxSiC series silicon carbide (SiC) MOSFETs, which deliver on- resistances of 45 mO, 80 mO, and 250 mO in standard packages for industrial applications, with custom products also available.

In addition, Vishay will provide a roadmap for 650 V to 1700 V SiC MOSFETs with on- resistances ranging from 10 mO to 1 O, including planned releases of AEC-Q101 qualified Automotive Grade products. Vishay's SiC platform is based on a proprietary MOSFET technology -- enabled through the company's recent acquisition of MaxPower Semiconductor, Inc. -- which will address market demands in multiple industrial and automotive applications, including DC/DC converters, energy storage, charging stations, on-board chargers, and traction inverters in the near future; A variety of application-focused reference designs targeting different voltage levels, including a high voltage intelligent battery shunt (HV-IBSS) reference design built on the WSBE series of low TCR Power Metal Strip®? shunt resistors; 800 V and 400 V active and passive discharge solutions; a 400 V, 11 kW on-board charger; a 48 V, 3.6 kW on-board charger and 48 V, 10 kW traction inverter for light electric vehicles; a 48 V resettable eFuse; and a 48 V /12 V bidirectional DC/DC converter; A smart cockpit component solution featuring the VCNL3030X01 fully integrated proximity sensor with 20 um detection resolution; VEML6031X00 high accuracy ambient light sensor with Filtron??

technology adaption for a response close to that of the human eye; VETH100A single-line, bidirectional ESD diode that's compliant to OEN Alliance 100Base-T1 and 1000Base-T1; and IHPTA series solenoid actuators with high force density and quick response times; Power MOSFETs in the PowerPAK®? 8x8LR package that enable highly energy-efficient designs while reducing the overall PCB temperature, and integrated half-bridge MOSFETs in The PowerPAIR 6x5FSW that reduce component counts and increase power density; Standard, Schottky, and FRED Pt®? diodes and TVS with increased power density and improved thermal resistance in compact DFN packages, and FRED Pt Gen 7 Hyperfast diodes with fast recovery times of 75 ns and low typical forward voltage drop of 1.10 V Capacitor solutions including ceramic disc safety capacitors with capacitance values up to 10 nF; ENYCAP??

electrical double-layer energy storage capacitors; and robust metallized polypropylene DC-Link film capabilities with high temperature operation up to +125 degC; A wide range of resistor solutions including temperature sensing and high voltage resistors; resistors for charging; battery shunts; PTC thermistors capable of handling energy absorption up to 300 J; NTC sensors offering high temperature operation to +150 degC; high precision thick film dividers; high voltage thin film flat chip resistors with excellent stability; non-inductive thick film power resistors; leadless NTC thermistor dies for wire bonding; and Power Metal Strip resistors with extremely low resistance values; The ITC thermistor resistors with extremely low resistance value. The ITC thermistor dies for wire bonds for wire bonding; and Power metal Strip resistors with extremely low low low resistance values; The IHPTA series of high temperature operation up to +150 degC. The ITC thermistors capable of handling high temperature operation up to + 150 degC; and high temperature operation up to 100degC; high temperature operation up to +250 degC; high voltage.