Enhancing the performance of GaN SG HEMTs: The new EiceDRIVER™ 1EDN71x6G HS 200 V single-channel gate driver family
December 15, 2021 at 02:59 pm IST
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Enhancing the performance of GaN SG HEMTs: The new EiceDRIVER™ 1EDN71x6G HS 200 V single-channel gate driver family
Dec 15, 2021| Market News
Munich, Germany - 15 December 2021 - Minimized R&D efforts and costs as well as robust and highly efficient operation of medium-voltage gallium-nitride (GaN) switches are key requirements for modern power electronics systems. In accordance with its strategically-designed GaN product portfolio to continuously strengthen full system solutions, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) introduces the EiceDRIVER™ 1EDN71x6G HS 200V single-channel gate driver ICs family. The new product family is designed to enhance the performance of CoolGaN™ Schottky Gate (SG) HEMTs but is also compatible with other GaN HEMTs and Silicon MOSFETs. The gate drivers aim at a wide range of applications including DC-DC converters, motor drives, telecom, server, robots, drones, power tools, and class D audio amplifiers.
1EDN71x6G variants come with selectable pull-up and pull-down driving strengths, enabling waveform and switching speed optimization without the need for gate resistors. This leads to a smaller power stage layout with fewer BOM components. The strongest/fastest driving variant (1EDN7116G) is suitable for half-bridge configurations with significant paralleling. The weakest/slowest driving variant (1EDN7146G) can be employed for some dv/dt-limited applications like motor drives or very small-die GaN (high-R DS(on), low Q g) HEMTs. Each variant also has a different blanking time, proportional to the minimum recommended dead-time, the minimum pulse width, and the propagation delay.
The truly differential logic input (TDI) feature eliminates the risk of false triggering due to ground bounce in low-side applications and enables 1EDN71x6G to address even high-side applications. Additionally, all variants feature an active Miller clamp with an exceptionally strong pull-down to avoid induced turn-on. This offers extra robustness against glitching in the gate driving loop, especially when driving transistors with a high Miller ratio.
Furthermore, 1EDN71x6G offers active bootstrap clamping to avoid overcharging the bootstrap capacitor during dead-time. This provides bootstrap supply voltage regulation that protects the high-side transistor's gate without requiring an additional regulation circuit. An optional programmable charge pump with adjustable negative turn-off supply is also provided for additional Miller-induced turn-on immunity when needed, e.g. when PCB layout cannot be fully optimized.
Availability
EiceDRIVER HS 200 V single-channel gate driver ICs 1EDN7116G, 1EDN7126G, 1EDN7136G, and 1EDN7146G for CoolGaN SG HEMTs can be ordered now in a PG-VSON-10 package. More information is available at www.infineon.com/eicedriver-1edn71x6x.
More information about Infineon's contribution to energy efficiency: www.infineon.com/green-energy
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Information Number
INFPSS202112-032
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Infineon's EiceDRIVER™ 1EDN71x6G variants come with selectable pull-up and pull-down driving strengths, enabling waveform and switching speed optimization without the need for gate resistors. This leads to a smaller power stage layout with fewer BOM components. The strongest/fastest driving variant (1EDN7116G) is suitable for half-bridge configurations with significant paralleling. The weakest/slowest driving variant (1EDN7146G) can be employed for some dv/dt-limited applications like motor drives or very small-die GaN (high-RDS(on), low Qg) HEMTs.
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Infineon Technologies AG published this content on 15 December 2021 and is solely responsible for the information contained therein. Distributed by Public, unedited and unaltered, on 15 December 2021 09:28:07 UTC.
Infineon Technologies AG is one of the world's leading manufacturers of semiconductors. The group's products include power semiconductors, sensors, microcontrollers, digital, mixed-signal and analog ICs, discrete semiconductor modules, switches, interface ICs, motor-controlling ICs, RF power transistors, voltage regulators, and electronic safety components. Net sales break down by area of activity as follows:
- automotive (50.5%): semiconductor products used in the automotive industry, and memory products for specific applications for automotive, industrial, information technologies, telecommunications and consumer electronics.
- power & sensor systems (23.3%): semiconductors for energy-efficient power supplies, mobile devices, mobile phone network infrastructures, human-machine interaction as well as applications with special demands on their robustness and reliability.
- industrial power control (13.5%): semiconductor products for the conversion of electrical energy for small, medium and high-power applications, used in the manufacturing, the low-loss transmission, the storage and the efficient use of electrical energy;
- connected secure systems (12.6%): semiconductors for networked devices, card-based applications, and government documents; microcontrollers for industrial, entertainment, and household applications, components for connectivity systems, various customer support systems;
- other (0.1%).
Net sales are distributed geographically as follows: Germany (12.4%), Europe/Middle East/Africa (14.4%), China/Hong Kong/Taiwan (32.3%), Japan (10.5%), Asia/Pacific (15.9%), the United States (12.1%) and Americas (2.4%).