Offered in PowerPAK® SO-8 Single Package, Device Combines On-Resistance Down to 2.35 mΩ With 55 nC Gate Charge and COSS of 614 pF
The device released today combines on-resistance down to 2.35 mΩ typical at 10 V with ultra low gate charge of 55 nC and COSS of 614 pF. These specifications are fine-tuned to reduce the power losses from switching, channel conduction, and diode conduction, resulting in increased efficiency. The MOSFET’s on-resistance times gate charge FOM is 12.2 % lower than the closest competing product and 22.5 % lower than the previous-generation device, making it the most efficient solution available for typical 48 V input to 12 V output DC/DC converters.
The SiR680ADP will serve as a building block in a wide variety of DC/DC and AC/DC conversion applications such as synchronous rectification, primary-side switching, buck-boost converters, resonant tank switching converters, and the OR-ing function in systems such as telecom and data center server power supplies; solar micro-inverters; motor drive control in power tools and industrial equipment; and battery switching in battery management modules.
The MOSFET is 100 % RG- and UIS-tested, RoHS-compliant, and halogen-free.
Samples and production quantities of the SiR680ADP are available now, with lead times of 12 weeks.
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Links to product datasheets:
http://www.vishay.com/ppg?77207 (SiR680ADP)
Link to product photo:
https://www.flickr.com/photos/vishay/albums/72157712547794758
For more information please contact:
peter.henrici@vishay.com
or
Redpines
bob.decker@redpinesgroup.com
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