Rambus Inc. and Tezzaron Semiconductor announced that they have signed an agreement to incorporate Rambus oxide-resistive memory (ReRAM) technology in forthcoming Tezzaron devices. This architecture license gives Tezzaron access to system IP, specifications and validation suites to design differentiated chips using ReRAM, which is ideally suited to improve the power and performance requirements in military, aerospace, and commercial memory applications. Tezzaron plans to build ReRAM into storage-class 3D memory devices for military, aerospace and commercial applications.

Tezzaron also plans to implement ReRAM in an assortment of SoCs, FPGAs and processors to exploit the extensive split-fab production experience of Tezzaron's fabrication subsidiary, Novati Technologies. Using ReRAM, Novati can add hundreds of megabytes of storage to a logic device manufactured in a standard commercial fab. In addition to military and aerospace applications, ReRAM technology can be utilized in a variety of embedded storage memory devices where low power, design integration, cost and performance are all important factors.

Among these, the development of storage memory in connected devices is fast becoming critical. The first in Tezzaron's family of ReRAM devices is currently in design and is scheduled for production in 2016.