1.Date of the resolution by the board of directors or
shareholders' meeting, or of the decision by the company:2022/07/11
2.Type (ex-rights or ex-dividend) (please write "Ex-rights",
"Ex-dividend", or "Ex-rights and dividend"):Ex-dividend
3.Type and monetary amount of dividend distribution:cash dividend of NTD 1.5
per common share. Amount of cash dividend is NTD 54,769,115. Due to
1,800 shares of restricted shares cancelled, the cash dividend per share
is amended to NTD 1.50007396.
4.Ex-rights (Ex-dividend) date:2022/07/28
5.Last date before book closure:2022/07/29
6.Book closure starting date:2022/07/30
7.Book closure ending date:2022/08/03
8.Ex-rights (Ex-dividend) record date:2022/08/03
9.Deadline for applying the conversion of the debt voucher:NA
10.The closure period for the conversion of the debt voucher will
start from the date:NA
11.The closure period for the conversion of the debt voucher will
end on the date:NA
12.Payment date of cash dividend distribution:2022/10/28
13.Any other matters that need to be specified:
(1) withholding tax may occur for this dividend distribution.
(2) indicative ditribution day is 2022/10/28.
(3) The amount of cash dividend shall be calculated to the dollars.
Shareholder shall be responsible for wire fee, postage or check processing
fee.
Attachments
Original Link
Original Document
Permalink
Disclaimer
IntelliEPI Inc. (Cayman) published this content on 11 July 2022 and is solely responsible for the information contained therein. Distributed by Public, unedited and unaltered, on 11 July 2022 10:13:33 UTC.
IntelliEPI Inc. (Cayman) is a Cayman Islands-based holding company of Intelligent Epitaxy Technology, Inc. The Company supplies epitaxy-based compound semiconductor EPI-wafers to the electronics and optoelectronics industries. It provides customers with a variety of electronics and optoelectronics EPI structures grown on Gallium Arsenide (GaAs) and Indium Phosphide (InP). Its GaAs based products include PHEMT (AlAs, InGaP Etch Stop) and MHEMT. Its InP based products include HBT (C-doped,Be-doped, GaAsSb), HEMT, RTT, and RTD. Its Sb based products include Type II SLS Photodetectors, GaAsSb-base InP HBT, and EPI-ready GaSb Substrates. Its opto-electronics products include Avalanche Photo Diode (APD), Lasers (750 nm to 1100 nm), VCSEL, PIN (GaAs, InP), QWIP, Modulators, and Quantum Cascade Lasers. It utilizes its real time in situ growth monitoring technology on molecular beam epitaxy (MBE) systems for the manufacturing of EPI-wafers on GaAs and InP substrates.