Weebit Nano has reported successful endurance results of its ReRAM cells as a key step towards moving to 300mm wafers at 28nm. The ReRAM cells demonstrated stable voltage levels and endurance, at levels competitive to production non-volatile memories. Weebit and its partner Leti, the French research institute recognised as a global leader in the field of micro-electronics, performed the tests which demonstrated Array-level endurance above 100,000 cycles, on par with expectation in the storage memory market, and a significant improvement over flash memories. In addition, Weebit ensured the SiOx ReRAM layer will be compatible with different tools and technologies used by different production fabs, which is crucial for transferring the Weebit technology to different commercial manufacturers. Final characterisation will continue over coming weeks on array performance and extended endurance and retention in preparation for the migration to 300mm wafers at 28nm.