Weebit Nano Limited has taped-out demonstration chips integrating its embedded Resistive Random-Access Memory (ReRAM) module in an advanced 22nm FD-SOI (fully depleted silicon on insulator) process technology. This is the first tape-out of Weebit ReRAM in 22nm, one of the industry's most common process nodes, and a geometry where embedded flash is not viable. Weebit worked with its development partners CEA-Leti and CEA-List to successfully scale its ReRAM technology down to 22nm.

The teams designed a full IP memory module that integrates a multi-megabit ReRAM block targeting the 22nm FD-SOI process which is designed to deliver outstanding performance for connected and ultra-low power applications such as IoT and edge AI. As embedded flash is unable to scale below 28nm, new non-volatile memory (NVM) technology is needed for smaller process geometries. Weebit ReRAM in 22nm FD-SOI offers a low-power, cost-effective embedded NVM solution that can withstand harsh environmental conditions.

Weebit's embedded ReRAM module includes an 8Mb ReRAM array, control logic, decoders, IOs (Input/Output communication elements) and error correcting code (ECC). It is designed with unique patent-pending analog and digital circuitry running smart algorithms that significantly enhance the memory array's technical parameters. Among other benefits, Weebit's ReRAM technology excels in harsh environmental conditions including high temperatures, radiation and electro-magnetic fields, making it ideal for applications such as IoT, medical, automotive and industrial.

The demo chips comprise a full sub-system for embedded applications, including the Weebit ReRAM module, a RISC-V microcontroller (MCU), system interfaces, memories and peripherals.