Weebit Nano Limited has made significant progress in its selector development with new results confirming its ReRAM selector is suitable for both embedded and discrete (stand-alone) applications, greatly increasing the number of possible applications for Weebit's technology. Weebit Nano, together with its development partner CEA-Leti, have demonstrated the potential of the Weebit ReRAM selector to achieve the high densities needed for discrete chips using standard materials and tools. In addition, this same selector technology will fit embedded applications, enabling unprecedented Non-Volatile Memory (NVM) densities for future system-on-chips (SoCs).

The new Weebit ReRAM selector was manufactured in CEA-Leti's R&D fab, and the silicon wafers were thoroughly tested for both programming and leakage currents. The results from this internal testing showed that the ratio between programming current and leakage current was at industry standard, signifying high on-state and low leakage current. In a memory array, the role of a selector is to ensure that only the specific cells which should be accessed actually are, and all other cells are disconnected and not impacted.

Embedded designs currently use a transistor as the selector device, but transistors increase the cell area of a memory bit and therefore cannot support the high densities required for discrete chips. In addition, future embedded applications such as edge AI and automotive will require far larger memory arrays and could benefit from an optimised selector that enables higher densities. Developing cost-efficient selectors using only standard materials and tools is a significant challenge, but has the potential to further minimise manufacturing cost and complexity.

While additional development is still required, this new selector technology could be easily integrated into any CMOS fab, potentially enabling the high-capacity memory arrays needed while keeping size and power to a minimum.