HPQ Silicon Inc. update shareholders on a recent patent filing related to its "Silicon-based anode material initiative." HPQ filed a new provisional patent application in France related to a continuous Silicon Oxide (SiOx) manufacturing process based on a modified PUREVAPTM QRR design. As per French law, HPQ acquired all rights held by the inventors for CAD 90,000.00. The patent protects a unique QRR technology configuration that allows the production of SiOx on the same equipment.

The new patented process has a significant advantage over the standard process in that it enables continuous production of SiOx, whereas the latter is produced in batches. The proposed process can be applied to the QRR without major changes in reactor design, reducing the technological development risks. Additionally, it is worth noting that the price of SiOx is approximately 2 to 3 times more expensive than silicon of the same purity.

Silicon suboxides (SiOx) are a promising anode material with high lithium storage capacity. Adding small amounts of silicon oxide to graphite composite electrodes has become a significant trend in the lithium battery industry. This has driven demand for silicon anode materials, which are estimated to reach a potential demand of 300,000 tons by 2030.

The selling price for silicon-based anode materials ranges from USD 30 per kg to USD 50 per kg.