Everspin Technologies, Inc. announced that IBM has chosen the PERSYST EMD4E001G 1Gb STT-MRAM for use in their FlashCore Module 4. The EMD4E001G, a high-performance persistent memory, ensures critical data integrity even during power loss. With a DDR4 interface, it delivers 2.7 gigabytes/second of both read and write bandwidth, coupled with instant non-volatility. Everspin's PERSYST technology sets the standard for persistent memory performance.
Everspin Technologies, Inc. is engaged in providing magneto resistive random-access memory (MRAM) solutions. The Company's MRAM solutions offer non-volatile memory with the speed and endurance of random-access memory (RAM) and enable the protection of mission-critical data, particularly in the event of a power interruption or failure. Its portfolio of MRAM technologies includes Toggle MRAM and Spin-transfer Torque MRAM (STT-MRAM). Toggle MRAM products include industry standard interfaces, including Parallel, Serial Peripheral Interface (SPI) and Quad SPI (QSPI) interfaces. Its STT-MRAM technology delivers products in dynamic random-access memory (DRAM), SRAM and NOR Flash applications. It offers its products with DDR3 and DDR4 derivative interfaces, facilitating the replacement of battery-backed DRAM with STT-MRAM. Its 3D Tunnel Magneto Resistance (TMR) sensors provide high magnetic sensitivity in a single component that performs 3D magnetic field measurements in a monolithic solution.