SGT MOSFET Development Status
GLOBAL LOCATIONS
Taipei
Automotive & Industrial Focus!
- Founded in 1979 in Taipei, Taiwan
- 18 Sales Channels Worldwide
- 4 Production Sites
Headquarter
Sales office
Front-end
Back-end
TSC AUTOMOTIVE MOSFET
RDS (ON), 導通阻抗 | |||||||
25% RDS (ON) | |||||||
2.0 | 33% FOM | ||||||
Improved | |||||||
13% RDS (ON) | |||||||
14% FOM | |||||||
TQM025NB04CR | Improved | 15% RDS (ON) | |||||
1.5 | |||||||
2.0mΩ (typ.) | |||||||
15% FOM | |||||||
FOM=236 | Improved | ||||||
AL Ribbon | |||||||
Wafer: 6mil | SGT40 | ||||||
1.0 | Ω | ||||||
1.5m (typ.) | SGT40 | ||||||
AL Ribbon | |||||||
1.3mΩ (typ.) | |||||||
Wafer: 6mil | |||||||
AL Wire | |||||||
I-Company | PerFET | ||||||
Wafer: 4mil | |||||||
0.5 | Ω | ||||||
(max.) | |||||||
1.1m | < 1 mΩ (max.) | ||||||
FOM=116 | |||||||
FOM=115 | |||||||
Standard Trench | Split-Gate Trench (SGT) | Cu Clip | |||||
Wafer: 3mil | Cu Clip | ||||||
(mΩ) | 標準溝槽式架構 | 新技術平台 → | 閘極分離式溝槽 | ||||
Wafer: 4mil | ID | ||||||
(A) | 25 | 50 | 75 | 100 |
FOM (Figure-of-Merit): MOSFET 產品性能指數
TSC AUTOMOTIVE MOSFET PROJECT TIMELINE
ADVANTAGES | ||
• In-house Design | ||
• | (Dual) Front-end collaboration | |
• | Product Specification Enhancement | |
• Quality + Value + Competitiveness | ||
263 | 13 | |
+ | + | |
44 | 44 |
TSC AUTOMOTIVE MOSFET PROJECT TIMELINE
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Taiwan Semiconductor Co. Ltd. published this content on 01 March 2023 and is solely responsible for the information contained therein. Distributed by Public, unedited and unaltered, on 01 March 2023 09:01:20 UTC.