Dimitri Antoniadis
Corporate Officer/Principal at Massachusetts Institute of Technology
Dimitri Antoniadis active positions
| Companies | Position | Start | End |
|---|---|---|---|
| Massachusetts Institute of Technology | Corporate Officer/Principal | 01/01/1978 | - |
Career history of Dimitri Antoniadis
Former positions of Dimitri Antoniadis
| Companies | Position | Start | End |
|---|---|---|---|
Ibis Technology Corp.
 Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Director/Board Member | 17/02/2009 | 17/02/2009 |
Statistics
International
| United States | 3 |
Operational
| Corporate Officer/Principal | 1 |
| Director/Board Member | 1 |
Sectoral
| Finance | 2 |
| Electronic Technology | 2 |
Positions held
Active
Inactive
Listed companies
Private companies
Linked companies
| Private companies | 1 |
|---|---|
Ibis Technology Corp.
Ibis Technology Corp. SemiconductorsElectronic Technology Ibis Technology Corp. develops, manufactures and markets SIMOX-SOI implantation equipment for the worldwide semiconductor industry. SIMOX creates an insulating oxide barrier below the top surface of a silicon wafer through implantation and annealing. The company's proprietary oxygen implanters produce SIMOX-SOI wafers by implanting oxygen atoms just below the surface of a silicon wafer to create a very thin layer of silicon dioxide between the thin operating region of the transistor at the surface and the underlying silicon wafer itself. It was founded in October 1987. | Electronic Technology |
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